Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2005-12-29
2009-08-04
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C438S600000, C257SE21592
Reexamination Certificate
active
07569429
ABSTRACT:
Disclosed are an antifuse having a uniform amorphous silicon (antifuse material) thickness and a method for fabricating such an antifuse device. The antifuse is located between overlying and underlying conductive layers, and includes: a contact and/or via hole in an insulating layer on the underlying conductive layer; a lower metal layer contacting inner surfaces of the contact and/or via hole and a top surface of the insulating layer; a filling layer contacting the lower barrier metal layer and at least partially filling the contact and/or via hole; an antifuse material layer contacting a top surface of the filling layer and a part of the lower metal layer; and an upper metal layer on the antifuse material layer.
REFERENCES:
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5525830 (1996-06-01), Chen et al.
patent: 5614756 (1997-03-01), Forouhi et al.
patent: 5639684 (1997-06-01), Kwok
patent: 5882997 (1999-03-01), Sur et al.
patent: 6057589 (2000-05-01), Look et al.
patent: 6097077 (2000-08-01), Gordon et al.
patent: 6261937 (2001-07-01), Tobben et al.
patent: 6580144 (2003-06-01), Anthony
patent: 6773967 (2004-08-01), Liu
Shih, Chih-Ching et al., Characterization and Modeling of a Highly Reliable Metal-to-Metal Antifuse for High-Performance and High-Density Field-Programmable Gate Arrays, IEEE International Reliability Physics Proceedings, 1997, 25-33, The Societies, Piscataway, N.J.
Zhang, G. et al., On-State Reliability of Amorphous Silicon Antifuses, IEDM Technical Digest, 1995, 551-554, Institute of Electrical & Electronics Engineers, Piscataway, N.J.
Wong, Richard J. et al., Reliability Mechanism of the Unprogrammed Amorphous Silicon Antifuse, IEEE International Reliability Physics Proceedings, 1994, 378-382, The Societies, Piscataway, N.J.
Brow William E.
Coleman W. David
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Kim Sun M
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