Antifuse having TiW oxide film between two metal layers

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...

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257209, 257530, 257669, H01L 23525, H01L 2942, H01L 2968

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active

053748328

ABSTRACT:
An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on its surface. Insulating regions (30) are formed adjacent the titanium tungsten layer (34) and overlying the first metal layer (28). A second metal layer (40) is formed overlying the titanium tungsten layer (34). Applying a break down voltage across the first and second metal layers (28), (40) will break down the oxide film (36), thereby causing a connection between the first and second metal layers (28), (40).

REFERENCES:
patent: 4888297 (1989-12-01), Aboelfotoh et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5219782 (1993-06-01), Liu et al.
Hamdy, et al., "Dielectric Based Antifuse for Logic and Memory ICS", IEEE, 1988, CH528-8188/0000-0786, pp.78614 IEDM88 to IEDM 88-789.
Sato, et al., "A New Programmable Cell Utilizing Insulator Breakdown", IEEE, 1985, CH2252-5/85/0000-0639, pp. IEDM85-639 to 642-IEDM85.

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