Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Patent
1993-08-25
1994-12-20
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
257209, 257530, 257669, H01L 23525, H01L 2942, H01L 2968
Patent
active
053748328
ABSTRACT:
An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on its surface. Insulating regions (30) are formed adjacent the titanium tungsten layer (34) and overlying the first metal layer (28). A second metal layer (40) is formed overlying the titanium tungsten layer (34). Applying a break down voltage across the first and second metal layers (28), (40) will break down the oxide film (36), thereby causing a connection between the first and second metal layers (28), (40).
REFERENCES:
patent: 4888297 (1989-12-01), Aboelfotoh et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5219782 (1993-06-01), Liu et al.
Hamdy, et al., "Dielectric Based Antifuse for Logic and Memory ICS", IEEE, 1988, CH528-8188/0000-0786, pp.78614 IEDM88 to IEDM 88-789.
Sato, et al., "A New Programmable Cell Utilizing Insulator Breakdown", IEEE, 1985, CH2252-5/85/0000-0639, pp. IEDM85-639 to 642-IEDM85.
Montgomery Scott
Tung Yingsheng
Brady III W. James
Brown Peter Toby
Donaldson Richard L.
Hille Rolf
Texas Instruments Incorporated
LandOfFree
Antifuse having TiW oxide film between two metal layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Antifuse having TiW oxide film between two metal layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse having TiW oxide film between two metal layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2387625