Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2009-03-27
2010-11-16
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21625, C257SE23147, C257SE29133, C257SE29137, C257SE29266, C438S165000, C438S981000
Reexamination Certificate
active
07834417
ABSTRACT:
An antifuse element (102, 152, 252, 302, 352, 402, 602, 652, 702) includes a substrate material (101) having an active area (106) formed in an upper surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a gate oxide layer (110) disposed between the gate electrode (104) and the active area (106). The gate oxide layer (110) includes one of a gate oxide dip (128) or a gate oxide undercut (614). During operation a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the gate oxide layer (110) and a rupture of the gate oxide layer (110) in a rupture region (130). The rupture region (130) is defined by the oxide structure and the gate oxide dip (128) or the gate oxide undercut (614).
REFERENCES:
patent: 4115914 (1978-09-01), Harari
patent: 4553314 (1985-11-01), Chan et al.
patent: 5057451 (1991-10-01), McCollum
patent: 5087950 (1992-02-01), Katano
patent: 5087958 (1992-02-01), Chen et al.
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5352618 (1994-10-01), Larsen et al.
patent: 5416072 (1995-05-01), Inada et al.
patent: 5576573 (1996-11-01), Su et al.
patent: 5633518 (1997-05-01), Broze
patent: 5679968 (1997-10-01), Smayling et al.
patent: 6396120 (2002-05-01), Bertin et al.
patent: 6753590 (2004-06-01), Fifield et al.
patent: 6940751 (2005-09-01), Peng et al.
patent: 7402855 (2008-07-01), Kurjanowicz
patent: 2004/0016991 (2004-01-01), Johnson et al.
patent: 2004/0156234 (2004-08-01), Peng et al.
Baird Robert W.
Lee Gordon P.
Min Won Gi
Zuo Jiang-Kai
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Lindsay, Jr. Walter L
Pompey Ron
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