Antifuse element with electrical or optical programming

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257765, H01L 2900

Patent

active

054850320

ABSTRACT:
A programmable antifuse element comprising adjacent bodies of germanium and aluminum or aluminum allow form a low resistance connection of good mechanical and thermal properties when heated to a temperature where alloying of the aluminum and germanium occurs. Heating for the purpose of programming the antifuse element can be done by electrical resistance heating in the-germanium, which may be doped to achieve a desired resistance value, or by laser irradiation. Due to the high resistance of intrinsic or lightly doped germanium, a resistance change ratio of greater than 10,000:1 is achieved.

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