Antifuse element and semiconductor device having antifuse elemen

Details Antifuse element and semiconductor device having antifuse elemen Antifuse element and semiconductor device having antifuse elemen

1994-12-05

1997-10-21

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257 52, H01L 2900, H01L 2904

Patent

active

056799748

ABSTRACT:
An antifuse element for a semiconductor device, comprising a bottom electrode made from a conductive material containing a refractory metal and a top electrode made from a conductive material containing a fusible metal. The fusible metal is Al, Al alloy, Cu or Ag. The Al alloy contains at least Si, Cu, Sc, Pd, Ti, Ta or Nb. The refractory metal is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo or W. Silicides are most preferable as the refractory metal. The semiconductor device is programmed by making the top electrode negative or positive and by applying a breakdown voltage between the bottom and top electrodes so as to break down an antifuse material layer, thereby obtaining a filament. The filament is made from the fusible metal from the top electrode and the refractory metal from the bottom electrode. Thus, the filament has a low resistance, and a good EM resistance.

REFERENCES:
patent: 4488262 (1984-12-01), Basire et al.
patent: 5521423 (1996-05-01), Shinriki et al.
"Scaled Dielectric Antifuse Structure For Field-Programmable Gate Array Applications", IEEE Electron Device Letters, vol. 12, No. 4, Apr. 1993, pp. 151-153.
"A Highly Reliable Metal-to-Metal Antifuse For High-Speed Field Programmable Gate Arrays", IEEE, IEDM Tech. Dig. (1993) pp. 31-34.
Babcock et al., "Ti-W contacts to Si ", J. App.l Phys. 53(10), American Institute of Pysics, Oct. 1982, pp. 6898-6905.

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