Antifuse element and semiconductor device having antifuse elemen

Details Antifuse element and semiconductor device having antifuse elemen Antifuse element and semiconductor device having antifuse elemen

1994-12-05

1997-06-24

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257 52, 257209, 257528, H01L 2904, H01L 2710, H01L 2900

Patent

active

056419856

ABSTRACT:
Antifuse elements for a semiconductor device comprise a bottom electrode, a top electrode, and an antifuse material layer. The bottom electrode is formed of a conductive material having an amorphous structure. The conductive material contains such elements as W, Ti, or a compound thereof. Since there is no grain boundary on the surface of the bottom electrode having an amorphous structure, any sharp protrusions are diminished to promote the smoothness. The antifuse material film is mounted on the surface of the bottom electrode. The bottom electrode contains such elements having an excellent EM resistance as W, Mo. These elements are also to be contained in a filament which is formed after programming.

REFERENCES:
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5404029 (1995-04-01), Husher et al.
patent: 5502315 (1996-03-01), Chua et al.
Babcock et al., "Ti-W Contacts to Si", J. Appl. Phys. 53(10), American Institute of Physics, Oct. 1982, pp. 6898-6905.
Y.K. Fang et al. "Observations on the phase transformation and its effect on the resistivity of WSi.sub.2 films prepared by low-pressure chemical vapor deposition," J. Appl. Phys. 57(8), 15 Apr. 1985, pp. 2980-2982.
N. Matsukawa et al., "New Models for Sheet Resistance Increase of Titanium Silicide Layers Formed on As Ion Implanted Si Substrates," Jun. 7-8, 1994 VMIC Conference, pp. 475-477.

Affiliated with

Also associated with

Rating

Antifuse element and semiconductor device having antifuse elemen does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Antifuse element and semiconductor device having antifuse elemen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse element and semiconductor device having antifuse elemen will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-150621