Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-08-14
2007-08-14
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000, C257SE23147, C257S410000
Reexamination Certificate
active
11095302
ABSTRACT:
An antifuse element (102) having end corners (120, 122) of a gate electrode (104) positioned directly above an active area (106) or bottom electrode. The minimum programming voltage between the gate electrode (104) and the active area (106) creates a current path through an insulating layer (110) positioned therebetween. The high electric field created at the end corners (120, 122) of the gate electrode (104) results in a breakdown and rupture of the insulating layer (110) at points directly beneath the end corners (120, 122). This localization of the insulating layer (110) at the corners (120,122) provides for lower post program resistance and variation, and faster programming at a lower programming power. The antifuse elements (102) when integrated into an array (300, 320, 400, 550) provide for increased packing density. The array is fabricated to include multiple active areas (304) for individual antifuse element (302) programming or a common active area (324,405,426,506) for multi-element programming.
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Baird Robert W.
Lee Gordon P.
Min Won Gi
Zuo Jiang-Kai
Freescale Semiconductor Inc.
Ho Tu-Tu
Lorenz Ingrassia Fisher
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