Antifuse development using .alpha.-c:h,n,f thin films

Details Antifuse development using .alpha.-c:h,n,f thin films Antifuse development using .alpha.-c:h,n,f thin films

1998-07-27

2000-09-05

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, active junction...

257530, H01L 2904

Patent

active

061147141

ABSTRACT:
The present application discloses a metal-to-metal antifuse with an amorphous carbon dielectric which provides a very high resistance off state and can be programmed at voltages compatible with deep submicron devices. Furthermore, the programmed filament achieves low resistance with low programming current while maintaining a high level of stability.

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patent: 5698992 (1997-12-01), El Ayat et al.
patent: 5753528 (1998-05-01), Forouhi et al.
patent: 5789764 (1998-08-01), McCollum

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