Antifuse circuit with well bias transistor

Details Antifuse circuit with well bias transistor Antifuse circuit with well bias transistor

2007-10-04

2010-02-02

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE27009

Reexamination Certificate

active

07656006

ABSTRACT:
An antifuse circuit includes a terminal, an antifuse transistor, and a bias transistor. The antifuse transistor is formed on a substrate. The antifuse transistor is coupled to the terminal and includes a first gate terminal coupled to receive a first select signal. The bias transistor is coupled between the substrate and a bias voltage terminal. The bias transistor has a second gate terminal and is operable to couple the bias voltage terminal to the substrate responsive to an assertion of a bias enable signal at the second gate terminal.

REFERENCES:
patent: 5257222 (1993-10-01), Lee
patent: 6346846 (2002-02-01), Bertin et al.
patent: 6388305 (2002-05-01), Bertin et al.

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