Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-08-07
2007-08-07
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S499000, C257S528000, C257S529000, C257SE23147
Reexamination Certificate
active
11238814
ABSTRACT:
In one embodiment, an antifuse cell includes a select transistor, a blocking transistor, and an antifuse. The select transistor allows for selection of the antifuse cell among an array of antifuse cells, while the blocking transistor limits the amount of voltage that may be directly applied to the select transistor. The antifuse may comprise a capacitor. In another embodiment, current used to program an antifuse cell is controlled using a programming current regulator. The programming current regulator may include components that form a current mirror with components of the antifuse cell to tightly control programming current through the antifuse. In yet another embodiment, dynamic current flowing through a substrate of an antifuse cell is limited using a current limiting resistor directly in series with an antifuse of the antifuse cell. The current limiting resistor minimizes or prevents excessive programming current.
REFERENCES:
patent: 2005/0007855 (2005-01-01), Lee et al.
Ben Kaczer, et al. “Consistent Model for Short-Channel nMOSFET After Hard Gate Oxide Breakdown”, IEEE Transactions on Electron Devices, vol. 49, No. 3, Mar. 2002, pp. 507-513.
B.P. Linder, et al. “Gate Oxide Breakdown under Current Limited Constant Voltage Stress”, IEEE, 2000 Symposium on VLSI Technology Digest of Technical Papers. pp. 214-215.
Jenne Fredrick B.
Kizziar John
Andujar Leonardo
Cypress Semiconductor Corporation
Okamoto & Benedicto LLP
Quinto Kevin
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