Antifuse circuit using standard MOSFET devices

Details Antifuse circuit using standard MOSFET devices Antifuse circuit using standard MOSFET devices

1995-12-21

1997-09-30

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

Fusible link or intentional destruct circuit

H01H 3776

Patent

active

056729944

ABSTRACT:
A programmable device is formed from a field-effect transistor. Specifically, the present invention generally related to integrated circuit (IC) structures and more particularly, to an improved antifuse structure for use in programming redundant and customizable IC chips. The anti-fuse is NFET made of MOS material and formed at a face of a semiconductor layer having an n-type doped source, and drain region, and a p-type doped channel region separating the source and drain regions. The device is programmed by applying a high voltage to the NFET drain to form a hot spot located along the channel width of the drain and thereby forming a bridge, which now has less resistance than the surrounding channel material, to the NFET source.

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