Antifuse circuit structure for use in a field programmable gate

Details Antifuse circuit structure for use in a field programmable gate Antifuse circuit structure for use in a field programmable gate

1994-10-07

1996-02-20

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, H01L 2900

Patent

active

054931479

ABSTRACT:
An antifuse structure particularly suitable for field programmable gate arrays is presented. In most present day processes the antifuse structure is formed with a refractory metal layer, amorphous silicon layer and refractory metal layer sandwiched between two metal interconnection lines. Unprogrammed resistances of very high values, programmed resistances of very low values, short programming times and desirable programming voltages are among the advantages realized.

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