Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-07-23
1994-09-20
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257230, 257231, H01L 2714
Patent
active
053492153
ABSTRACT:
Solid-state image sensors, in general, comprise a photodetector for detecting radiation from the image and converting the radiation to charge carriers, and transfer means for carrying the charge carriers to an output circuit. One type of solid-state image sensor uses a CCD as both the photodetector and the transfer means. The solid-state image sensor generally includes a plurality of the CCD's arranged in spaced parallel relation to form an array. The image sensor of this disclosure utilizes only one antiblooming lateral overflow barrier. The excess signal charge of phase 1 flows into the preceding phase 2 and is saved. This eliminates the overflow barrier of phase 1 so that blooming protection is via the overflow barrier of the preceding phase 2. This results in an image sensor with blooming protection and increased charge capacity.
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Kosonocky et al, "Control of Blooming in Charge-Coupled Imagers," RCA Review, vol. 35, Mar. 1974, pp. 1-23.
Anagnostopoulos Constantine N.
Chang Win-chyi
Stevens Eric G.
Torok Georgia R.
Eastman Kodak Company
Mintel William
Owens Raymond L.
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