1984-09-11
1985-09-03
James, Andrew J.
357 68, 357 54, 357 55, H01L 2348, H01L 2946, H01L 2934, H01L 2906
Patent
active
045395829
ABSTRACT:
A semiconductor device comprising a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a bonding pad formed on the first insulating layer, a conductive layer formed on the first insulating layer and adjacent to the bonding pad, and a second insulating layer formed to cover the conductive layer characterized in that the surface of the second insulating layer formed on and near the conductive layer is made at the same level as or lower than the surface of the bonding pad.
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patent: 3721838 (1973-03-01), Brickman et al.
patent: 3942187 (1976-03-01), Gelsing et al.
patent: 4060828 (1977-11-01), Satonaka
patent: 4198648 (1980-04-01), Nishizawa
patent: 4228447 (1980-10-01), Sato et al.
patent: 4259678 (1981-03-01), van Gorkom et al.
patent: 4270262 (1981-06-01), Hori et al.
James Andrew J.
Lamont John
Tokyo Shibaura Denki Kabushiki Kaisha
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