Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-05-30
1998-06-23
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, 216 88, H01L 2100
Patent
active
057705216
ABSTRACT:
A method and system for removing an 8-inch semiconductor wafer from a final polishing pad of a Chemical Mechanical Polishing machine is disclosed. The polishing machine includes a rotating platen, and a polishing pad affixed thereto for rotation therewith. Moreover, the machine includes a generally-cylindrical carrier portion rotatable about an axis of rotation for receiving and retaining the semiconductor wafer. During normal operation, the platen and carrier both rotate about their respective axes of rotation, while, in addition, the carrier is oscillated by a mechanical arm along the surface of the polishing pad in a substantially radial path, relative to the axis of the platen. Prior to removing the wafer, the platen and carrier rotation is discontinued, while the radial movement of the carrier is allowed to continue for predetermined number of oscillations during a predetermined time to thereby dissipate adhesion forces inhibiting removal of the wafer.
REFERENCES:
patent: 5593537 (1997-01-01), Cote et al.
Cypress Semiconductor Corporation
Powell William
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