Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2010-03-26
2011-12-06
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S065000, C257S098000
Reexamination Certificate
active
08071402
ABSTRACT:
In this method for producing an anti-reflective film, pores are formed on a surface of a polymer molding material to continuously change a refractive index and then reduce reflectance, in which anodic oxidized porous alumina, in which pores having a tapered shape and whose pore diameter continuously changes, are formed by repeating anodic oxidation at about the same formation voltage and pore diameter enlargement treatment, is used as a mold, or a stamper, which is produced by using the anodic oxidized porous aluminum as a mold, is used as a mold.
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Kawamoto Yasushi
Masuda Hideki
Yasui Kenji
Fitch Even Tabin & Flannery
Kanagawa Academy of Science and Technology
Picardat Kevin M
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