Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-04-14
1999-11-16
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257437, 257635, 257759, H01L 2358
Patent
active
059863447
ABSTRACT:
In a photo-lithographic step for providing contact points to lower layers of a semiconductor device, an anti-reflective coating (ARC) layer, such as FLARE 2.0.TM., is used to provide a good contact points to an underlayer. After the contact points are made, the anti-reflective coating layer is removed, with the removal being performed in a same step in which a photo-resist is removed from the semiconductor device. In an alternative configuration, the ARC layer remains in the semiconductor device after the fabrication process is competed, thereby acting as an interlayer dielectric during operation of the semiconductor device.
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Internet Web Site Article, www.alliedsignal.com, "Electronic Materials", retrieved Mar. 1998.
Gallardo Ernesto A.
Pangrle Suzette K.
Pellerin John G.
Subramanion Ramkumar
Advanced Micro Devices , Inc.
Baumeister Bradley William
Jackson, Jr. Jerome
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