Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – Mixing of two or more solid polymers; mixing of solid...
Reexamination Certificate
2001-03-26
2003-02-04
Moore, Margaret G. (Department: 1712)
Synthetic resins or natural rubbers -- part of the class 520 ser
Synthetic resins
Mixing of two or more solid polymers; mixing of solid...
C525S474000, C525S477000, C106S287140, C106S287160
Reexamination Certificate
active
06515073
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to an anti-reflective coating-forming composition. More particularly, the present invention relates to an anti-reflective coating-forming composition which is remarkably less subject to adverse effects of light reflected by the substrate when a pattern is formed by lithography and can be etched at a high rate even in the form of thick anti-reflective coating to form a high precision fine resist pattern.
BACKGROUND OF THE INVENTION
Processes for the production of semiconductors such as IC and LSI, liquid crystal display elements and circuit boards such as thermal head involve precision working with a photoresist. In recent years, higher precision has been required in this precision working. The trend in the art is for more manufacturers to use radiations having a shorter wavelength such as exima laser beam instead of far ultraviolet rays (having a wavelength of 300 nm or less). With the reduction of the wavelength of radiations, an approach involving the provision of an anti-reflective coating (bottom anti-reflective coating; BARC) between the photoresist and the substrate has been widely studied to eliminate adverse effects of standing wave developed by light reflected by the surface of the substrate. An organic anti-reflective coating comprising a light absorber and a polymer material has been proposed as an anti-reflective coating. Examples of the foregoing anti-reflective coating include a lithographic base material comprising a crosslinking agent component substituted by hydroxylalkyl group or alkoxyalkyl group, a benzophenone-based, diphenylsulfone-based or diphenylsulfoxide-based dye component and an acrylic resin component as disclosed in JP-A-8-87115 (The term “JP-A” as used herein means an “unexamined published Japanese patent application”), JP-A-9-292715 and JP-A-10-228113, and an anti-reflective composition comprising a resin binder containing quinolinyl group, quinolinyl group having N, O or S cyclic substituents, phenanthrenyl group, acridyl group or alkyleneanthracene group and a crosslinking material such as glycoluryl as disclosed in JP-A-10-204328.
As disclosed in WO97/07145, an anti-reflective coating composition mainly composed of two components such as anti-reflective coating composition comprising as main components a resin component obtained by polymerizing an epoxy resin with a dye component substituted by anthracene ring or naphthalene ring as a substituent and a crosslinking agent component such as melamine, urea, benzoguanamine and glycoluryl.
The organic anti-reflective coating-forming materials disclosed in the above cited patents have a high absorption capacity with respect to radiations, undergo no intermixing with a photoresist and exhibit a sufficient resistance to the developer for use in the development step after exposure. However, with the reduction of the wavelength of exposing light, the photoresist layer therefor has been required to have a reduced thickness. Further, anti-reflective coatings have been required to undergo etching at a raised rate. In this respect, all these anti-reflective coating-forming compositions are disadvantageous in that they cannot be etched at a sufficient rate. Accordingly, when the thickness of the photoresist pattern is increased to eliminate difference in level on the substrate, the reduction of thickness of photoresist pattern becomes remarkable, making it impossible to effect lithographic processing.
Further, JP-A-12-44876 proposes an anti-reflective coating material comprising an alkali-soluble resin and a disilane-based polysilane silica component entangled with each other on a molecular basis. However, the anti-reflective coating material thus proposed is disadvantageous in that it cannot be etched at a sufficient rate with respect to etching gases commonly used in the state-of-the-art process, making it difficult to form circuit patterns, etc.
SUMMARY OF THE INVENTION
Under these circumstances, the inventors made extensive studies. As a result, it was found that when a specific silane compound comprises a thermosetting resin incorporated therein which can be condensed to the silane compound and has a high absorption capacity with respect to exposing light, an anti-reflective coating-forming composition can be obtained which exhibits an enhanced absorption capacity with respect to reflected light or the like, allows the resulting anti-reflective coating to be etched at a raised rate, making it possible to cope with the reduction of thickness of photoresist layer and thus form an excellent pattern even when the thickness of anti-reflective coating is increased to eliminate difference in level on the substrate, and has a sufficient resistance to the developer.
It is therefore an object of the invention to provide an anti-reflective coating-forming composition which can form an anti-reflective coating having a high absorption capacity with respect to reflected light or the like, having no adverse effects of standing wave on thin resist film, allowing an etching rate high enough to cope with the reduction of thickness of photoresist layer even when the thickness of the anti-reflective coating is increased to eliminate difference in level on the substrate and having a sufficient resistance to the developer.
The foregoing object of the present invention will become apparent from the following detailed description and examples.
The foregoing object of the present invention is accomplished with an anti-reflective coating-forming composition comprising (A) at least one compound selected from the group consisting of (i) a compound represented by the following formula (1):
Si(OR
1
)
a
(OR
2
)
b
(OR
3
)
c
(OR
4
)
d
(1)
wherein R
1
, R
2
, R
3
and R
4
each independently represent a C
1-4
alkyl group or phenyl group; a, b, c and d each independently represent an integer of from 0 to 4, with the proviso that the sum of a, b, c and d is 4; (ii) a compound represented by the following formula (2):
R
5
Si(OR
6
)
e
(OR
7
)
f
(OR
8
)
g
(2)
wherein R
5
represents a hydrogen atom, a C
1-4
alkyl group or phenyl group; R
6
, R
7
and R
8
each independently represent a C
1-3
alkyl group or phenyl group; e, f and g each independently represent an integer of from 0 to 3, with the proviso that the sum of e, f and g is 3; and (iii) a compound represented by the following formula (3):
R
9
R
10
Si(OR
11
)
h
(OR
12
)
I
(3)
wherein R
9
and R
10
each independently represent a hydrogen atom, a C
1-4
alkyl group or phenyl group; R11 and R12 each independently represent a C
1-3
alkyl group or phenyl group; h and i each independently represent an integer of from 0 to 2, with the proviso that the sum of h and i is 2 and (B) a thermosetting resin which can be condensed to the component (A) and has an absorption capacity with respect to exposing light.
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be further described hereinafter.
As the component (A) to be incorporated in the anti-reflective coating-forming composition of the invention there is used at least one compound selected from the group consisting of the foregoing compounds (i), (ii) and (iii). Examples of the compound (i) include tetraalkoxysilanes such as tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetrabutoxysilane, tetraphenyloxysilane, trimethoxymonoethoxysilane, dimethoxydiethoxysilane, triethoxymonomethoxysilane, trimethoxymonopropoxysilane, monomethoxytributoxysilane, monomethoxytriphenyloxysilane, dimethoxydipropoxysilane, tripropoxymonomethoxysilane, trimethoxymonobutoxysilane, dimethoxydibutoxysilane, triethoxymonopropoxysilane, diethoxydipropoxysilane, tributoxymonopropoxysilane, dimethoxymonoethoxy monobutoxysilane, diethoxymonomethoxy monobutoxysilane, diethoxymonopropoxymonobutoxysilane, dipropoxymonomethoxy monoethoxysilane, dipropoxymonomethoxy monobutoxysilane, dipropoxymonoethoxymonobutoxysilane, dibutoxymonomethoxy monoethoxysilane, dibutoxymonoethoxy monopropoxysilane and monomethoxymonoethoxymonopropoxy monobutoxysilane, and ol
Hagiwara Yoshio
Omori Katsumi
Sakamoto Yoshinori
Fish & Richardson P.C.
Moore Margaret G.
Tokyo Ohka Kogyo Co. Ltd.
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