Anti-reflection coatings for semiconductor lasers

Details Anti-reflection coatings for semiconductor lasers Anti-reflection coatings for semiconductor lasers

2007-02-06

2007-02-06

Wong, Don (Department: 2163)

Coherent light generators

Particular active media

Semiconductor

C257S098000

Reexamination Certificate

active

10735375

ABSTRACT:
The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiNx:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiNx:H whose density approaches the density of crystalline Si3N4.

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Stanley Wolf et al., 1986, Lattice Press, vol. 1 : Process Technology , p. 191-194.

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