Anti-penetration structure of EL device

Details Anti-penetration structure of EL device Anti-penetration structure of EL device

2003-02-21

2004-05-04

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S079000, C257S100000, C257S431000, C257S432000, C257S433000, C257S435000

Reexamination Certificate

active

06730935

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention is related to an anti-penetration structure of EL device, in which a voltage-durable layer is disposed between a front electrode layer and a lighting layer. The voltage-durable layer is able to enhance the voltage-durability of the EL device and prevent the lighting layer from being penetrated.
FIG. 2
shows a conventional electro luminescent (EL) device. The conventional EL device is composed of a transparent substrate
81
, a front electrode layer
82
, a lighting layer
83
, an inducing layer
84
, a back electrode layer
85
and an insulating packaging layer
86
which are sequentially overlaid on the transparent substrate
81
. By means of applying an AC voltage between the front and back electrode layers
82
,
85
, the numerous lighting particles
831
of the lighting layer
83
are energized to emit light through the transparent substrate
81
.
Due to structural or material factors, the lighting layer
83
has some shortcomings as follows:
1. The material has insufficient electricity-durability.
2. Bubbles are produced when manufacturing the lighting layer
83
.
3. The alien materials or impurities in the solvent will contaminate the lighting layer
83
.
4. The purity of the lighting material is insufficient.
5. The thickness of the material is uneven or holes are formed on the material.
Due to the above shortcomings, in dynamic test, instantaneous leakage of current will take place in the EL device to penetrate and burn down the lighting layer
83
. This lowers the ratio of good product and increases manufacturing cost.
SUMMARY OF THE INVENTION
It is therefore a primary object of the present invention to provide an anti-penetration structure of EL device, in which a voltage-durable layer is disposed between the front electrode layer and the lighting layer. The voltage-durable layer is made of a mixture of more than one voltage-durable material and is able to enhance the voltage-durability of the EL device so as to prevent the lighting layer from being penetrated.
According to the above object, the anti-penetration structure of EL device of the present invention includes a transparent substrate, a front electrode layer, a lighting layer, an inducing layer and a back electrode layer, which are sequentially overlaid on the substrate. The lighting layer, inducing layer and back electrode layer are enclosed by an insulating packaging layer. A voltage-durable layer is disposed between the front electrode layer and the lighting layer. The voltage-durable layer is formed of a mixture of more than one voltage-durable material.


REFERENCES:
patent: 6498114 (2002-12-01), Amundson et al.
patent: 2001/0046579 (2001-11-01), Ishii et al.
patent: 2002/0024096 (2002-02-01), Yamazaki et al.
patent: 2002/0061451 (2002-05-01), Kita et al.
patent: 2002/0163614 (2002-11-01), Hinata et al.
patent: 2002/0171798 (2002-11-01), Tanaka et al.

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