Anti-parallel tab sensor fabrication

Details Anti-parallel tab sensor fabrication Anti-parallel tab sensor fabrication

2008-03-11

2008-03-11

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C360S324120

Reexamination Certificate

active

11215381

ABSTRACT:
A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer having tab areas on opposite sides of an active area, forming a first layer of a carbon composition above the active area of the free layer, the first layer of carbon being substantially absent from tab areas of the free area, forming spacer layers above the tab areas of the free layer, the spacer layers being operable to make magnetic moments of ferromagnetic layers on opposite sides thereof antiparallel, forming bias layers above the spacer layers, the bias layers being operative to substantially pin magnetic moments of the tab areas of the free layer, forming second layers of carbon composition above the tab areas of the free layer, and removing the layers of carbon composition and any portions of the layers overlying the layers of carbon composition.

REFERENCES:
patent: 5856897 (1999-01-01), Mauri
patent: 5985162 (1999-11-01), Han et al.
patent: 7123452 (2006-10-01), Guo
patent: 7270854 (2007-09-01), Freitag et al.
patent: 2001/0040782 (2001-11-01), Ju et al.
patent: 2003/0039078 (2003-02-01), Li et al.
patent: 2004/0100738 (2004-05-01), Lahiri et al.

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