Anti-parallel-pinned spin valve sensor with minimal pinned layer

Details Anti-parallel-pinned spin valve sensor with minimal pinned layer Anti-parallel-pinned spin valve sensor with minimal pinned layer

1997-10-27

1999-04-27

Evans, Jefferson

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

058985492

ABSTRACT:
An Anti-Parallel (AP)-Pinned SV sensor having a free layer separated from an AP-pinned layer by a conducting spacer. The AP-pinned layer includes a first, second and third pinned layers where the first pinned layer is separated from the second and third pinned layers by an anti-parallel coupling layer. An antiferromagnetic (AFM) layer is used to pin the AP-pinned layer magnetizations directions. The first pinned layer is formed over and in contact with the AFM layer. The first and second pinned layers are made of highly resistive material such as NiFeCr and the third pinned layer is made of low resistive material such as cobalt. The use of a highly resistive first and second pinned layers reduces the amount of sense current flowing in the AP-pinned layer as well as eliminating interdifussion at the AFM/first pinned layer interface resulting in larger GMR coefficient, well controlled net moment, highly stable sensor, and reduced read signal asymmetry.

REFERENCES:
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5508866 (1996-04-01), Gill et al.
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5701222 (1997-12-01), Gill et al.
patent: 5701223 (1997-12-01), Fontana, Jr. et al.
patent: 5737157 (1998-04-01), Gill
patent: 5739988 (1998-04-01), Gill
patent: 5748399 (1998-05-01), Gill
patent: 5768069 (1998-06-01), Mauri
patent: 5768071 (1998-06-01), Lin
patent: 5793207 (1998-08-01), Gill
patent: 5793576 (1998-08-01), Gill
patent: 5796561 (1998-08-01), Mauri
IBM TDB, R.L. Anderson, "Evaporated Soft Bias Films", Jul. 1978, p. 852.

Affiliated with

Also associated with

Rating

Anti-parallel-pinned spin valve sensor with minimal pinned layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anti-parallel-pinned spin valve sensor with minimal pinned layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anti-parallel-pinned spin valve sensor with minimal pinned layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-689136