Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-02-06
2000-10-03
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257751, 257752, 257764, H01L 2900, H01L 2904, H01L 2348
Patent
active
RE0368938
ABSTRACT:
An anti-fuse structure formed in accordance with the present invention includes a conductive layer base. A layer of anti-fuse material overlies the conductive base layer. On top of the anti-fuse layer is an insulating layer, in which a via hole is formed to the anti-fuse layer. The lateral dimension of the via hole is less than about 0.8 microns. Provided in the via hole is a conductive non-Al plug including a conductive barrier material such as TiN or TiW to contact the anti-fuse material and overlie the insulating layer. Tungsten is effectively used as the non-Al plug. An electrically conductive layer is formed over the plug and is separaged from the anti-fuse layer by at least one-half the depth of the via hole. The structure is then programmable by application of a programming voltage and readable by application of a sensing voltage, which is lower than the programming voltage.
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patent: 5120679 (1992-06-01), Boardman et al.
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5374832 (1994-12-01), Tung et al.
patent: 5427979 (1995-06-01), Chang
Nariani Subhash R.
Pramanik Dipankar
Ngo Ngan V.
VLSI Technology Inc.
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