Anti-fuse ROM programming circuit

Details Anti-fuse ROM programming circuit Anti-fuse ROM programming circuit

1995-01-13

1996-02-27

Nelms, David C.

Static information storage and retrieval

Read only systems

Fusible

3652257, 327536, G11C 1700

Patent

active

054954363

ABSTRACT:
A "charge-kicker" programming circuit for programming anti-fuse links in integrated-circuit memory devices permits smaller feature sizes and a correspondingly lower breakdown voltage by using reduced internal voltage levels to generate a gate voltage for a series pass transistor. A series pass transistor gates a high voltage programming signal (typically 13 volts) to a high-voltage programming line. Selection circuits steer the high voltage programming signal to various columns of anti-fuse elements. A fixed voltage, insufficient to turn on the series pass transistor is applied to the gate terminal of the series pass transistor. An alternating voltage is applied directly onto the gate terminal of the series pass transistor through a capacitor so that the peaks of the alternating voltage turn on the series pass transistor which gates the programming voltage to the main high voltage programming line for the anti-fuse memory array.

REFERENCES:
patent: 5397939 (1995-03-01), Gordon et al.

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