Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-04-12
2011-04-12
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S529000, C257S390000, C257SE27102, C257SE27103
Reexamination Certificate
active
07923813
ABSTRACT:
A One Time Programmable (OTP) memory cell (10) comprising a first, metallic layer (12) coated with a second, conductive stable transition compound (14) with an insulating layer (16) there-between. The first and second layers (12, 14) are selected according to the difference in Gibbs Free Energy between them, which dictates the chemical energy that will be generated as a result of an exothermic chemical reaction between the two materials. The materials of the first and second layers (12, 14) are highly thermally stable in themselves but, when a voltage is applied to the cell (10), a localized breakdown of the insulative layer (16) results which creates a hotspot (18) that sets off an exothermic chemical reaction between the first and second layers (12, 14). The exothermic reaction generates sufficient heat (20) to create a short circuit across the cell and therefore reduce the resistance thereof.
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Lambert Nicolaas
Mijiritskii Andrei
Van Acht Victor M. G
Van Der Sluis Paul
Woerlee Pierre H.
Gurley Lynne A
NXP B.V.
Yushina Galina
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