Anti-fuse device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE23147

Reexamination Certificate

active

07897967

ABSTRACT:
An anti-fuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A channel is formed between the source and drain regions. A gate and gate oxide are formed on the channel and lightly doped source and drain extension regions are formed in the channel. The lightly doped source and drain regions extend across the channel from the source and the drain regions, respectively, occupying a substantial portion of the channel. Programming of the anti-fuse is performed by application of power to the gate and at least one of the source region and the drain region to break-down the gate oxide, which minimizes resistance between the gate and the channel.

REFERENCES:
patent: 4397887 (1983-08-01), Aytac et al.
patent: 5163180 (1992-11-01), Eltoukhy et al.
patent: 5306656 (1994-04-01), Williams et al.
patent: 5619063 (1997-04-01), Chen et al.
patent: 5774011 (1998-06-01), Au et al.
patent: 5909049 (1999-06-01), McCollum
patent: 5946575 (1999-08-01), Yamaoka et al.
patent: 6046494 (2000-04-01), Brigham et al.
patent: 6266269 (2001-07-01), Karp et al.
patent: 6326651 (2001-12-01), Manabe
patent: 6388305 (2002-05-01), Bertin et al.
patent: 6515931 (2003-02-01), Marr et al.
patent: 6518614 (2003-02-01), Breitwisch et al.
patent: 6525955 (2003-02-01), Smith et al.
patent: 6545926 (2003-04-01), Ooishi et al.
patent: 6700176 (2004-03-01), Ito et al.
patent: 6902958 (2005-06-01), Ito et al.
patent: 2001/0050407 (2001-12-01), Gelsomini et al.
patent: 2002/0024073 (2002-02-01), Shimada et al.
patent: 2002/0074616 (2002-06-01), Chen et al.
patent: 2002/0093074 (2002-07-01), Bertin et al.
patent: 2003/0123314 (2003-07-01), Buer et al.
patent: 2003/0128576 (2003-07-01), Smith et al.
patent: 2004/0157379 (2004-08-01), Ito et al.
patent: 0 495 317 (1992-07-01), None
European Search Report from EP Appl. No. 03016223.4, 4 pages (dated Nov. 20, 2003).
B. Kaczer et al., “Consistent Model for Short-Channel nMOSFET Post-Hard-Breakdown Characteristics,” 2001 Symposium on VLSITechnology Digest of Technical Papers, pp. 121-122, 2001.
R. Degraeve et al., “Relation Between Breakdown Mode and Location in Short-Channel nMOSFETs and its impact on Reliability Specifications,” IEEE, 7 pages 2001.
Communication from the European Patent Office on European Patent Application 03016223.4, mailed May 18, 2010, 6 pgs.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Anti-fuse device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anti-fuse device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anti-fuse device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2664311

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.