Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-08-02
2011-08-02
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C438S598000, C438S132000, C438S281000, C257S209000, C257SE23147
Reexamination Certificate
active
07989914
ABSTRACT:
An anti-fuse cell includes a standard MOS transistor of an integrated circuit, with source and drain regions covered with a metal silicide layer and at least one track of a resistive layer at least partially surrounding the MOS transistor, and adapted to pass a heating current such that the metal of said metal silicide diffuses across drain and/or source junctions.
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International Search Report from corresponding International Application No. PCT/EP2005/057150, filed Dec. 23, 2005.
Borot Bertrand
Fabre Sébastien
Gonella Roberto Maurizio
Choudhry Mohammad
Jorgenson Lisa K.
Koninklijke Philips Electronics , N.V.
Morris James H.
Pham Thanh V
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