Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-03-22
2005-03-22
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000
Reexamination Certificate
active
06870240
ABSTRACT:
The anti-fuse comprises a substitutable layer14, an interconnection layer20connected to the substitutable layer, and the interconnection layer contains metal atoms which can be substituted with constituent atoms of the substitutable layer. The anti-fuse can be changed from the non-conduction state to the conduction state at a relatively low temperature of 300° C. to 600° C., and by application of not so intense laser beams, the anti-fuse can be changed from the non-conduction state to the conduction state. The anti-fuse can be changed from the non-conduction state to the conduction state by using an inexpensive equipment, which can realize decrease of fabrication costs and accordingly inexpensive semiconductor devices can be provided.
REFERENCES:
patent: 4814853 (1989-03-01), Uchida
patent: 5714795 (1998-02-01), Ohmi et al.
patent: 6498056 (2002-12-01), Motsiff et al.
patent: 6549447 (2003-04-01), Fricke et al.
patent: 20030052320 (2003-03-01), Tran et al.
patent: 11-97535 (1999-04-01), None
Hiroshi Horie et al.,Novel High Aspect Ratio Aluminum Plug for Logic/DRAM LSIs Using Polysilicon-Aluminum Substitute(PAS), International Electron Device Meeting 96; pp. 946-948 (1996).
S. Nakamura et al.;Aluminum Word Line and Bit Line Fabrication Technology for COB DRAM Using a Polysilicon-Aluminum Substitute, 1999 Symposium on VLSI Technology Digest of Technical Papers, 4A-2, pp. 35-36, (1999).
Fujitsu Limited
Westerman Hattori Daniels & Adrian LLP
Wilson Allan R.
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