Anti-blooming image sensor

Details Anti-blooming image sensor Anti-blooming image sensor

1986-01-07

1987-06-02

James, Andrew J.

357 31, 357 32, 357 24, H01L 2714

Patent

active

046707662

ABSTRACT:
A solid-state image sensor is formed of the combination of a semiconductor substrate having a charge transfer function and a photoconductive film. In this solid-state image sensor, blooming suppressing capability is greatly increased by controlling the following potentials to fixed potentials, that is, (1) the potential of a transparent electrode formed on the photoconductive film, (2) the channel potential of a MOS field-effect transistor formed of a charge transfer stage and a gate electrode which are formed together with a Si diode in the semiconductor substrate in which the diode is electrically connected to the photoconductive film, and (3) the barrier potential of the charge transfer stage.

REFERENCES:
patent: 3866067 (1975-02-01), Amelio
patent: 3996600 (1976-12-01), Patrin
patent: 4236829 (1980-12-01), Chikamura et al.
patent: 4242599 (1980-12-01), Suzuki
patent: 4271420 (1981-06-01), Chikamura
patent: 4328432 (1982-05-01), Yamazaki
patent: 4354104 (1982-10-01), Chikamura et al.
patent: 4500924 (1985-02-01), Ohta
patent: 4504848 (1985-03-01), Matsumoto et al.

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