Anti-blooming drain structure in charge coupled device image sen

Details Anti-blooming drain structure in charge coupled device image sen Anti-blooming drain structure in charge coupled device image sen

1986-06-25

1988-07-26

Munson, Gene M.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 30, 35821319, H01L 2978, H01L 2714, H01L 3100, H04N 314

Patent

active

047604352

ABSTRACT:
A frame transfer buried channel CCD image sensor incorporating an anti-blooming drain structure (25, 27) wherein accumulation of charge of opposite polarity to that drained by the anti-blooming drain structure is prevented. This can conveniently be achieved by arranging for the buried channel diffusion (19) in each channel to stop short of the anti-blooming drain diffusion (25) on one side of each channel. As a result of the prevention of charge accumulation the anti-blooming drain structure remains effective with optical overloads much greater than the optical overload at which anti-blooming performance begins to deteriorate in conventional buried channel CCD image sensors.

REFERENCES:
patent: 3932775 (1976-01-01), Kosonocky
patent: 4028716 (1977-06-01), van Santen et al.
patent: 4207477 (1980-06-01), Esser
patent: 4485315 (1984-11-01), Collet et al.
patent: 4593303 (1986-06-01), Dyck et al.
patent: 4603342 (1986-07-01), Savoye et al.
patent: 4607429 (1986-08-01), Kosonocky

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