Anti-blooming charge transfer device

Details Anti-blooming charge transfer device Anti-blooming charge transfer device

1981-01-14

1982-05-04

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307311, 357 24, 357 30, G11C 1928, H03K 342, H01L 2978, H01L 2714

Patent

active

043284329

ABSTRACT:
A charge transfer image sensor device having an anti-blooming function is disclosed. The device comprises a semiconductor substrate, a plurality of sensor region which store signal charges in response to the incident radiation during a predetermined period, a shift register to read out the stored signal charges. The anti-blooming function is achieved by applying alternately voltage to the area adjacent to the sensor regions during a predetermined period to put the surface of the semiconductor substrate into an accumulation or depletion state. The electrons trapped at the surface state are recombined with majority carriers of the substrate when the area is an accumulation area and the excess signal charges are trapped at the surface state which is vacant by the previous recombination when the area is a depletion area. Thus the excess charges are removed through the surface state which results in anti-blooming.

REFERENCES:
patent: 3931465 (1976-01-01), Levine

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