Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-12-04
1992-12-15
Cuchlinski, Jr., William A.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
374121, 374176, 2503362, 505847, 505849, G01K 716, G01J 520, G01J 508, H01L 3912
Patent
active
051717336
ABSTRACT:
A device is provided for measuring radiant energy, the device comprising a substrate; a bolometer formed from a high T.sub.c superconducting material disposed on the substrate in an area that is about 1.times.5 .mu.m.sup.2 and about 0.02 .mu.m in depth; and a planar antenna disposed on the substrate and coupled to receive radiation and to impart the received radiation to the bolometer.
REFERENCES:
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patent: 4600840 (1986-07-01), Chutjian
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Neikirk, D. P., et al., "Imaging Antenna Arrays," Sixth International Conference on Infrared and Millimeter waves (Dec. 7-12, 1981).
Wu, X. D. et al., "High critical currents in epitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x thin films on silicon with buffer layers," Appl. Phys. Lett. 54(8) (Feb. 20, 1989).
Jia, Q. X. et al., "Sputter deposition of YBa.sub.2 Cu.sub.3 O.sub.7-x films on Si at 500.degree. C. with conducting metallic oxide as a buffer layer," Appl. Phys. Lett. 57(3) (Jul. 16, 1990).
Wiener-Avnear, E. et al., "In situ layer deposition of Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x high T.sub.c superconducting thin films with SrTiO.sub.3 underlayers," Appl. Phys. Lett. 56(18) (Apr. 30, 1990).
Hwang, et al., "Microbolometers for infrared detection" Appl. Phys. Lett. 34, pp. 773-776, (Jun. 1, 1979).
Hu and Richards, "Design analysis of a High T.sub.c superconducting microbolometer" Appl. Phys. Lett. 55 (23), pp. 2444-2446, (Dec. 4, 1989).
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Cuchlinski Jr. William A.
Gutierrez Diego F. F.
The Regents of the University of California
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