Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area
Reexamination Certificate
2006-03-21
2006-03-21
King, Roy (Department: 1742)
Electrolysis: processes, compositions used therein, and methods
Electrolytic coating
Coating selected area
C205S316000, C205S324000, C205S333000, C438S409000, C438S455000
Reexamination Certificate
active
07014748
ABSTRACT:
This invention is to reduce the influence of a gas generated by an anodizing reaction. A silicon substrate (101) to be processed is horizontally held. A negative electrode (129) is arranged on the upper side of the silicon substrate (101), and a positive electrode (114) is brought into contact with the lower surface of the silicon substrate (101). The space between the negative electrode (129) and the silicon substrate (101) is filled with an HF solution (132). The negative electrode (129) has a number of degassing holes (130) to prevent a gas generated by the anodizing reaction from staying on the lower side of the negative electrode (129).
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An Office Action in Korean language dated Feb. 21, 2002, in a counterpart foreign application issued by Korean patent office, and a Japanese translation of the office action.
Kazuo Imai, “A New Dielectric Isolation Method Using Porous Silicon”, Solid State Electronics vol. 24, Mar. 13, 1980, pp. 159-164.
Matsumura Satoshi
Yamagata Kenji
Canon Kabushiki Kaisha
King Roy
Leader William T.
Morgan & Finnegan L.L.P.
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