Anodized memory disk substrate and method of manufacturing the s

Details Anodized memory disk substrate and method of manufacturing the s Anodized memory disk substrate and method of manufacturing the s

1986-09-04

1987-07-07

Andrews, R. L.

Chemistry: electrical and wave energy

Processes and products

204 351, 204 58, 365 97, 365171, 369288, 428545, 428934, C25D 550

Patent

active

046785477

ABSTRACT:
An anodized memory disk substrate is disclosed, which is characterized in having an anodic film having excellent heat resistance and hardness and having a thickness of not less than 3 .mu.m on the surface of aluminum or an aluminum alloy substrate imparted thereto by means of chromic acid-sulfuric acid mixture. The method described therefor is that, after the formation of anodic film having a film thickness of not less than 4 .mu.m on the surface of substrate, polishing is carried out so as to leave behind the anodic film having a film thickness of at least 3 .mu.m. Heat treatment may be made before or after the polishing.

REFERENCES:
patent: 2437620 (1948-03-01), Speer

Affiliated with

Also associated with

Rating

Anodized memory disk substrate and method of manufacturing the s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anodized memory disk substrate and method of manufacturing the s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anodized memory disk substrate and method of manufacturing the s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1661085