Anodizable strain layer for SOI semiconductor structures

Details Anodizable strain layer for SOI semiconductor structures Anodizable strain layer for SOI semiconductor structures

1989-03-10

1991-01-01

James, Andrew J.

Fishing, trapping, and vermin destroying

357 47, 437 71, 437 67, 437 72, H01L 2120, H01L 2176

Patent

active

049822632

ABSTRACT:
A silicon on insulator semiconductor structure employs a strain layer fabricated of an electrically inactive material. The strain layer comprises silicon with a germanium additive to produce a sublayer exhibiting a low breakdown voltage and thus effective for selective anodization.

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