Anodizable strain layer for SOI semiconductor structures

Details Anodizable strain layer for SOI semiconductor structures Anodizable strain layer for SOI semiconductor structures

1987-12-21

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 437 67, 437 72, 204 15, H01L 2120, H01L 2176

Patent

active

048493708

ABSTRACT:
A silicon on insulator semiconductor structure employs a strain layer fabricated of an electrically inactive material. The strain layer comprises silicon with a germanium additive to produce a sublayer exhibiting a low breakdown voltage and thus effective for selective anodization.

REFERENCES:
patent: 4104090 (1978-08-01), Pogge
patent: 4459181 (1984-07-01), Benjamin
patent: 4490182 (1984-12-01), Scovell
patent: 4529455 (1985-07-01), Bean et al.
patent: 4532700 (1985-08-01), Kinney et al.
patent: 4659400 (1921-04-01), Garbis et al.
patent: 4711857 (1987-12-01), Cheng
patent: 4717681 (1988-01-01), Curran
patent: 4760036 (1988-07-01), Schubert

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