Anodically bonded ultra-high-vacuum cell

Details Anodically bonded ultra-high-vacuum cell Anodically bonded ultra-high-vacuum cell

2008-10-27

2010-10-05

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S660000, C257SE21333

Reexamination Certificate

active

07807509

ABSTRACT:
The present invention discloses an anodically bonded vacuum cell structure with a glass substrate including a cavity, and a substrate deposited on the glass substrate, thereby enclosing the cavity to form a bonding interface. The bonding interface having silicon such that the substrate includes a layer of silicon or a secondary substrate with silicon layer bonded onto the secondary substrate.

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