Anodic etching method for the detection of electrically active d

Details Anodic etching method for the detection of electrically active d Anodic etching method for the detection of electrically active d

1977-07-25

1979-12-25

Tung, T.

Chemistry: electrical and wave energy

Processes and products

2041293, G01N 2746

Patent

active

041804392

ABSTRACT:
Electrically active defects, i.e., current-carrying defects or leakage paths in silicon crystals, are detected by an anodization process. The process selectively etches the crystal surface only where the electrically active defects are located when the anodization parameters are properly selected. Selected surface portions of the silicon structure are exposed to a hydrofluoric acid solution which is maintained at a negative potential with respect to the silicon structure. When the potential difference is set to a proper value, etch pits are formed in the surface of the silicon only at those locations overlying electrically active defects which impact device yield. The defects are observed and counted to provide a basis to predict yield of desired semi-conductor devices to be formed later in the silicon structure.

REFERENCES:
patent: 3303109 (1967-02-01), Just
patent: 3379625 (1968-04-01), Csabi
patent: 3536600 (1970-10-01), Van Dijk et al.
patent: 3616345 (1971-10-01), Van Dijk et al.
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3660250 (1972-05-01), Duffy et al.
patent: 3713922 (1973-01-01), Lepselter et al.
patent: 3846259 (1974-11-01), Duncan et al.
patent: 3902979 (1975-09-01), Thomas

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