Anode assisted sputter etch and deposition apparatus

Details Anode assisted sputter etch and deposition apparatus Anode assisted sputter etch and deposition apparatus

1978-10-06

1980-05-06

Mack, John H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, 204192E, C23C 1500

Patent

active

042016541

ABSTRACT:
An anode assisted sputter etch and deposition apparatus having an electron source, a first anode adjacent the electron source and a second anode adjacent a negatively charged article to be sputter etched or sputter target in an ionizable gas atmosphere. Upon production of the electrons from said electron source a plasma is formed between the electron source, the first anode and the second anode, the plasma adjacent the second anode being capable of desorbing gases and other absorbed vapors from the surface of the article or target while positive ions from the plasma bombard the article or target with sufficient energy to eject material from the surface thereof.

REFERENCES:
patent: 3451917 (1969-06-01), Moseson
patent: 3487000 (1969-12-01), Hajzak
patent: 3507774 (1970-04-01), Muly, Jr.
patent: 3583899 (1971-06-01), Aronson
patent: 3669871 (1972-06-01), Elmgren et al.
patent: 3836451 (1974-09-01), Snaper
patent: 4013533 (1977-03-01), Cohen-Solal et al.
patent: 4096055 (1978-06-01), Johnson
L. I. Maissel and R. Glang; Handbook of Thin Film Technology; McGraw Hill, 1970; Chapter 4 pp. 4-1 through 4-9.
L. I. Maissel; Physics of Thin Films, vol. 3, Academic Press, 1966.

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