Annealing synthetic diamond type Ib

Details Annealing synthetic diamond type Ib Annealing synthetic diamond type Ib

1977-12-14

1979-11-13

Meros, Edward J.

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

51307, C01B 3106

Patent

active

041743806

ABSTRACT:
Type Ib synthetic diamond crystal is annealed at an annealing temperature ranging from about 1500.degree. C. to about 2200.degree. C. under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least about 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.

REFERENCES:
patent: 3141746 (1964-07-01), DeLai
patent: 3574580 (1971-04-01), Stromberg et al.
patent: 3630679 (1971-12-01), Angus
patent: 3819814 (1974-06-01), Pope
patent: 4073380 (1978-02-01), Strong et al.
Stromberg et al., "American Ceramic Bulletin", vol. 49, No. 12 (1970), pp. 1030-1032.
Angus et al., "J. Applied Physics", vol. 39, No. 6, May 1963, pp. 2915-2922.
Klyuev et al., "Sov. Phys. Solid State", vol. 16, No. 11, May 1975, pp. 2118-2121.
Jewelers' Circular Keystone, Jul. 1970, pp. 186-189.

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