Annealing solar cells of InP/CdS

Details Annealing solar cells of InP/CdS Annealing solar cells of InP/CdS

1975-06-16

1976-10-26

Mack, John H.

Metal treatment

Compositions

Heat treating

29572, 136 89, 148174, 148175, 357 16, 357 30, H01L 700, H01L 3104

Patent

active

039881725

ABSTRACT:
Solar cells showing improved efficiency, amounting to about 14 percent for overall solar power conversion, are obtained by annealing InP/CdS solar cells in a slightly reducing atmosphere for about 15 minutes in a temperature range preferably from about 550.degree. centrigrade to about 600.degree. centigrade. In an annealing temperature range from 400.degree. centigrade to 625.degree. centigrade, an inversely dependent adjustment of annealing time is found desirable. The atmosphere preferably comprises mainly a substantially inert component and typically comprises an H.sub.2 + N.sub.2 mixture, such as forming gas (15% H.sub.2 + 85% N.sub.2).

REFERENCES:
patent: 3492167 (1970-01-01), Nakayama et al.
patent: 3888697 (1975-06-01), Bogus
A.Y. Cho & H.C. Casey, Jr., "GaAs-AlxGa.sub.1.sub.-x As Double Heterostructure Lasers Prepared by Molecular Beam Epitaxy," Applied Physics Letters, vol. 25, No. 5, Sept. 1974, pp. 288-290.

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