Annealing process to stabilize PECVD silicon nitride for applica

Details Annealing process to stabilize PECVD silicon nitride for applica Annealing process to stabilize PECVD silicon nitride for applica

1990-02-09

1990-10-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG114, 437241, 437243, 437247, 437174, 437 94, 437942, H01L 21318

Patent

active

049620657

ABSTRACT:
A process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.

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