Annealing process and device of semiconductor wafer

Details Annealing process and device of semiconductor wafer Annealing process and device of semiconductor wafer

2006-08-22

2006-08-22

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S480000, C438S799000

Reexamination Certificate

active

07094668

ABSTRACT:
A device and method for annealing a wafer. The preferred embodiment includes applying a basic thermal budget to a weakened zone of a wafer, substantially evenly over the weakened zone. The basic thermal budget is insufficient to detach a detachment layer from a remainder of the wafer at the weakened zone. An additional thermal budget is applied locally in an initiation region of the weakened zone to initiate the detachment of the detachment layer at the weakened zone.

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