Annealing process

Details Annealing process Annealing process

1986-01-23

1987-11-24

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427377, 4273833, 4273839, 437225, B05D 306

Patent

active

047088834

ABSTRACT:
An ion implantation annealing source for a controlled excess of the most volatile element of a multielement compound semiconductor whereby the source is provided with interstices and contains the most volatile element of the multielement semiconductor; and process of ion implantation employing the annealing source.

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patent: 4194927 (1980-03-01), Takagi et al.
patent: 4312681 (1982-01-01), Rupprecht et al.
patent: 4383869 (1983-05-01), Liu
patent: 4389255 (1983-06-01), Chen et al.
IBM Technical Disclosure Bulletin, vol. 25, No. 11A, Apr. 1983, "Solid Diffusion Source with Textured Surface", R. H. Katyl.
Patent Abstracts of Japan, unexamined applications, E Field, vol. 5, No. 30, Feb. 24, 1981, the Patent Office Japanese Government, p. 135 E 47, Kokai-No. 55-158628 (Tokyo Shibaura Denki K.K.).
Patent Abstracts of Japan, unexamined applications, E section, vol. 136, No. 10, 1977, the Patent Office Japanese Government, p. 6537 E 77, Kokai-No. 52-73673 (Nippon Denki K.K.).
Applied Physics Letters, vol. 38, No. 8, Apr. 15, 1981, J. M. Woodall, et al., "Proximate Capless Annealing of GaAs Using a Controlled-Escess as Vapor Pressure Source", pp. 639-641.

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