Metal treatment – Compositions – Heat treating
Patent
1977-11-16
1979-05-15
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148175, 219121L, 357 18, 357 91, H01L 21268, H01L 2126
Patent
active
041546253
ABSTRACT:
Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.
REFERENCES:
patent: 3585088 (1971-06-01), Schwuttle et al.
patent: 3940289 (1976-02-01), Marquardt et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4070205 (1978-01-01), Rahilly
Kachurin et al., "Annealing . . . Defects . . . Laser . . .," Sov. Phys. Semicond. 9, (1976), 946.
Bolotov et al., "Laser Annealing . . . in . . . GaAs," Sov. Phys. Semicond. 10, (1976), 338.
Kachurin et al., "Annealing . . . Laser Beam," Sov. Phys. Semicond. 10, (1976), 1128.
Bogatyrev et al., "Implanted . . . GaAs . . . Laser . . .," Sov. Phys. Semicond. 10, (1976), 826.
Bhatia et al., "Isolation Process . . .," IBM-TDB, 19, (1977), 4171.
Kutukova et al., "Laser Annealing . . . Si," Sov. Phys. Semicond., 10, (1976), 265.
Cuomo et al., "Amorphous . . . Solar Cell and Laser," IBM-TDB, 20, (1977), 2061.
Westermorland et al., "Lattice Disorder . . . GaAs . . .," Radiation Effects, 5, (1970), 245.
Golovchenko Jene A.
Venkatesan Thirumalai N. C.
Bell Telephone Laboratories Incorporated
Roy Upendra
Rutledge L. Dewayne
Wilde Peter V. D.
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