Annealing of ion implanted III-V compounds in the presence of an

Details Annealing of ion implanted III-V compounds in the presence of an Annealing of ion implanted III-V compounds in the presence of an

1980-04-23

1982-01-26

Roy, Upendra

Metal treatment

Compositions

Heat treating

148175, 156DIG73, 357 61, H01L 21477

Patent

active

043126812

ABSTRACT:
Practice of the disclosure reduces thermal decomposition and retains stoichiometry during annealing of a multiple element intermetallic semiconductor material by heating it in an environment with an excess of the most volatile constituent. In particular, practice of the disclosure is obtained by annealing a GaAs wafer with a surface into which Si has been implanted while the surface is in proximity to InAs.

REFERENCES:
patent: 3070467 (1962-12-01), Fuller et al.
patent: 4135952 (1979-01-01), Anderson et al.
Immorlica et al., Appl. Phys. Letts. 29 (1976), 94-95.
Kasahara et al., J. Appl. Phys. 50 (1979), 541-543.
Lee et al., in Ion Implantation in Semiconductors, 1976, Ed. Chernow et al., Plenuon, N. Y., pp. 115-122.

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