Metal treatment – Compositions – Heat treating
Patent
1981-01-26
1982-11-02
Roy, Upendra
Metal treatment
Compositions
Heat treating
148175, 357 61, H01L 21263, H01L 2948
Patent
active
043571808
ABSTRACT:
A method of annealing both N and P-type ion-implanted GaAs and InP semiconductors by using a close-contact capping technique. A flat polished ion-implanted surface on a gallium arsenide (GaAs) or indium phosphide (InP) semiconductor is placed in face-to-face contact with a non-reactive flat surface such as Si.sub.3 N.sub.4, SiO.sub.2, AlN, or identical semiconductor material, and annealed at selected elevated temperatures and time dependent upon ion concentration. The annealed semiconductor material, usually in the form of a wafer, is allowed to cool to room temperature for further processing.
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Beers Robert F.
Ellis William T.
Roy Upendra
The United States of America as represented by the Secretary of
Walden Kenneth E.
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