Annealing method to increase minority carrier life-time for neut

Details Annealing method to increase minority carrier life-time for neut Annealing method to increase minority carrier life-time for neut

1977-06-13

1979-01-23

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 91, H01L 21263

Patent

active

041359518

ABSTRACT:
Semiconductor materials which have been doped by neutron transmutation require annealing at high temperatures in order to alleviate radiation damage and to restore electrical resistivity; however, the minority carrier lifetime is reduced significantly through the irradiation and/or the annealing process. A method for increasing the minority carrier lifetime while maintaining the restored electrical resistivity is achieved by cooling the heated annealed materials at a cooling rate less than about 4.degree. C. per minute and preferably less than about 3.degree. C. per minute to ambient temperatures.

REFERENCES:
patent: 3914138 (1975-10-01), Rai-Choudhary et al.
M. Hill, et al., "Prep-.sup.n. . . . of NTD Silicon for Power Device Research", IEEE Trans., vol. ED-23, Aug., 1976, p. 809.
H. M. Janus, et al., "Appl-.sup.n. of Thermal Neutron Irradiation . . . P-Doping of FZ-Si", IEEE Trans., ED-23, (1976), 797.

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