Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2009-03-03
2011-10-11
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S608000, C438S660000
Reexamination Certificate
active
08034656
ABSTRACT:
An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hydrogen gas in the chamber.
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Kisco
The Belles Group P.C.
Trinh Michael
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