Annealing method of zinc oxide thin film

Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...

Reexamination Certificate

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C438S608000, C438S660000

Reexamination Certificate

active

08034656

ABSTRACT:
An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hydrogen gas in the chamber.

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