Annealing method for compound semiconductor substrate

Details Annealing method for compound semiconductor substrate Annealing method for compound semiconductor substrate

1986-11-28

1988-06-21

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG4, 437 22, 437942, 437939, H01L 21265

Patent

active

047525924

ABSTRACT:
An annealing method for a GaAs wafer which uses incoherent light, e.g., infrared light generated from tungsten lamp, halogen lamp, etc. and a GaAs guard ring which surrounds the GaAs wafer. The thickness of the guard ring is 1.5 times more than that of the GaAs wafer, the internal diameter of the guard ring is less than diameter of GaAs wafer plus 3 mm and the width of the guard ring is less than 10 mm.

REFERENCES:
patent: 4468259 (1984-08-01), Mimura
patent: 4469529 (1984-09-01), Mimura
patent: 4482393 (1984-11-01), Nishiyama et al.
patent: 4482395 (1984-11-01), Hiramoto
patent: 4504323 (1985-03-01), Arai et al.
patent: 4560420 (1985-12-01), Lord
Badawi et al., Electronics Letts., 20, (1984), 125.
Cummings et al., Jour. Appl. Phys., 60, (1986), 163.
Hiramoto et al., Jap. Jour. Appl. Phys., 24, (1985), L-193.

Affiliated with

Also associated with

Rating

Annealing method for compound semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Annealing method for compound semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Annealing method for compound semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-929924